| Part Name |
Description |
View |
| 2SC496 |
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) |
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| C495 |
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) |
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| C496 |
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) |
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| 2SC828 |
2SC828 / NPN Silicon Epitaxial Planar C828 Transistor |
|
| 2SC828A |
2SC828 / NPN Silicon Epitaxial Planar C828 Transistor |
|
| C828 |
2SC828 / NPN Silicon Epitaxial Planar C828 Transistor |
|
| C828A |
2SC828 / NPN Silicon Epitaxial Planar C828 Transistor |
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| 2SK3565 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) |
|
| K3565 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) |
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| 2SK3878 |
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) |
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| K3878 |
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) |
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| 2SK3878(F,T) |
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) |
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| 2SK3878 |
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) |
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| 2SK3878(F) |
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) |
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| K3878 |
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) |
|
| K6A65D |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSⅦ) |
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| TK6A65D |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSⅦ) |
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| 2SK3562 |
Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) |
|
| K3562 |
Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) |
|
| 2SK3563 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) |
|
| K3563 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) |
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| 2SK3563 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) |
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| K3563 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) |
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| 2SK3563 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) |
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| K3563 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) |
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| K1117 |
2SK1117, K1117 / V dss = 600V |
|
| K10A60 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type / Switching Regulator Applications |
|
| K10A60D |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type / Switching Regulator Applications |
|
| TK10A60D |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type / Switching Regulator Applications |
|
| TK10A60D(Q,M) |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type / Switching Regulator Applications |
|
| TK10A60D(STA4,Q,M) |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type / Switching Regulator Applications |
|
| K13A60D |
Silicon N-Channel MOS Type (π -MOSⅦ ) Field Effect Transistor |
|
| TK13A60D |
Silicon N-Channel MOS Type (π -MOSⅦ ) Field Effect Transistor |
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| 2SK3561 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) |
|
| K3561 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) |
|
| K3561 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) |
|
| 2SK3561 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) |
|
| K3561 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) |
|
| 2SK3561 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) |
|
| 2SK3561 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) |
|
| K3561 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) |
|
| K8A500 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSⅦ) |
|
| K8A50D |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSⅦ) |
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| TK8A500 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSⅦ) |
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| TK8A50D |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSⅦ) |
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| M2LZ47 |
BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE |
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| SM2LZ47 |
BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE |
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| S1854 |
SILICON N-SUBSTRATE MONOLITHIC TYPE |
|
| RN2301 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
|
| RN2302 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
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